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Gallium Nitride Nanotubes by the Conversion of Gallium Oxide Nanotubes
Author(s) -
Hu Junqing,
Bando Yoshio,
Golberg Dmitri,
Liu Quanlin
Publication year - 2003
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200351001
Subject(s) - materials science , gallium , gallium nitride , nanotube , amorphous solid , gallium oxide , nanotechnology , oxide , optoelectronics , carbon nanotube , layer (electronics) , chemistry , metallurgy , crystallography
The future technology of blue lasers and optical communication, and is likely to be based on GaN. The creation of crystalline GaN nanotubes in bulk has been achieved by a two‐stage process based on the well‐controllable amorphous gallium oxide (Ga 2 O) nanotube conversion. The as‐synthesized GaN nanotubes have fairly uniform diameters of ≈80 nm, wall thicknesses of ≈20 nm, and lengths of up to several tens of micrometers.