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Amine‐Reactive Monolayers on Scribed Silicon with Controlled Levels of Functionality: Reaction of a Bare Silicon Surface with Mono‐ and Diepoxides
Author(s) -
Lua YitYian,
Lee Michael V.,
Fillmore William J. J.,
Matheson Reija,
Sathyapalan Amarchard,
Asplund Matthew C.,
Fleming Steven A.,
Linford Matthew R.
Publication year - 2003
Publication title -
angewandte chemie international edition
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 1433-7851
DOI - 10.1002/anie.200250846
Subject(s) - monolayer , silicon , amine gas treating , epoxide , yield (engineering) , chemistry , reactive intermediate , nanotechnology , photochemistry , chemical engineering , materials science , organic chemistry , catalysis , engineering , metallurgy
The reaction of epoxides with a bare silicon surface is reported (see scheme). Diepoxides yield amine‐reactive monolayers on scribed silicon. Controlled levels of epoxide functionality are obtained in mixed monolayers of 1,2‐epoxyoctane and 1,2,7,8‐diepoxyoctane.