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Phase Transformations and Phase Stability in Epitaxial β‐GaN Films
Author(s) -
Trampert Achim,
Brandt Oliver,
Ploog Klaus H.
Publication year - 1997
Publication title -
angewandte chemie international edition in english
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 0570-0833
DOI - 10.1002/anie.199721111
Subject(s) - metastability , epitaxy , materials science , phase (matter) , hexagonal crystal system , realization (probability) , stability (learning theory) , interface (matter) , transformation (genetics) , hexagonal phase , crystallography , optoelectronics , condensed matter physics , nanotechnology , chemistry , physics , mathematics , computer science , layer (electronics) , composite material , quantum mechanics , statistics , capillary number , machine learning , capillary action , biochemistry , gene
The production of single‐phase GaN , which is important for the realization of optoelectronic devices, is intricated by the existence of two polytypes (α‐GaN hexagonal, β‐GaN cubic, metastable). Both the orientation of the interface between teh cubic matrix and the polytypic hexagonal inclusion and the influence of the specific nature of the interface on the stability of the transformed polytype are of fundamental importance for the phase transformation of β‐to α;‐GaN.

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