z-logo
Premium
Making and Breaking of SiE (E = C, Si) Bonds by Oxidative Addition and Reductive Elimination Reactions
Author(s) -
Schubert Ulrich
Publication year - 1994
Publication title -
angewandte chemie international edition in english
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 0570-0833
DOI - 10.1002/anie.199404191
Subject(s) - reductive elimination , oxidative addition , oxidative phosphorylation , chemistry , photochemistry , catalysis , organic chemistry , biochemistry
Important steps in metal‐mediated stoichiometric or catalytic reactions of organosilicon compounds are oxidative additions and reductive eliminations. Although the tools to tune the ability of a metal complex fragment to undergo such reactions are, in principle, known—for example, oxidative additions are facilitated by metals which are easily oxidized and by small ancillary ligands—the challenge for the chemist is to make these reactions, particularly for SiC and SiSi bonds, more predictable.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here