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“Supersilyl” Compounds (R 3 Si) 3 SiSi(SiR 3 ) 3 and (R 3 Si) 3 SiC 6 H 4 Si(SiR 3 ) 3 : Structures and Properties
Author(s) -
Bock Hans,
Meuret Jochen,
Ruppert Klaus
Publication year - 1993
Publication title -
angewandte chemie international edition in english
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 0570-0833
DOI - 10.1002/anie.199304141
Subject(s) - delocalized electron , organosilicon , steric effects , spectroscopy , ion , crystallography , ionization energy , electron paramagnetic resonance , spin density , electron delocalization , ionization , materials science , chemistry , stereochemistry , nuclear magnetic resonance , physics , condensed matter physics , organic chemistry , quantum mechanics , polymer chemistry
Remarkable properties characterize organosilicon compounds like 1 and 2: some of their structures are distorted by steric overcrowding and their first ionization energies drop as a result of additional radical cation stabilization to unexpectedly low values. In the π‐radical anion of 2 considerable spin delocalization in the SiSi 3 frameworks is detected by ESR/ENDOR spectroscopy.
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