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Metal Organic Chemical Vapor Deposition (MOCVD) Perspectives and Prospects
Author(s) -
Williams John O.
Publication year - 1989
Publication title -
angewandte chemie international edition in english
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 0570-0833
DOI - 10.1002/anie.198911101
Subject(s) - metalorganic vapour phase epitaxy , chemical vapor deposition , epitaxy , pyrolysis , materials science , molecular beam epitaxy , thin film , nanotechnology , deposition (geology) , metal , optoelectronics , chemistry , organic chemistry , metallurgy , layer (electronics) , paleontology , sediment , biology
Review: Thin film epitaxial semiconductor structures of widely varying but controlled compositions and thickness can be prepared using MOCVD. The performance of the method is gauged against molecular beam epitaxy (MBE) and spray pyrolysis, and comment is made on the direction in which this area of research is going, for example, towards the processing of high‐ T c superconductors and ferroelectric oxides.