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Tailoring Semiconductor Crystals to Atomic Dimensions
Author(s) -
Joyce Bruce A.
Publication year - 1989
Publication title -
angewandte chemie international edition in english
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 0570-0833
DOI - 10.1002/anie.198910981
Subject(s) - molecular beam epitaxy , semiconductor , diffraction , materials science , electron diffraction , chemical physics , curse of dimensionality , electron , nanotechnology , condensed matter physics , optoelectronics , chemistry , epitaxy , physics , optics , computer science , quantum mechanics , layer (electronics) , machine learning
This article provides an introduction to the growth by molecular beam epitaxy (MBE) of semiconductor structures which have dimensions of the same order as interatomic distances in solids. The basic process technology is first described, followed by a brief account of surface reaction mechanisms involved in the growth of GaAs from an atomic beam of Ga and molecular beams of As 4 and As 2 . From the study of growth dynamics using electron diffraction techniques it is shown how reduced dimensionality structures can be grown and some indication is given of the effect of quantum confinement on material properties. Finally, some recent modifications of MBE based on flux interruption are described.