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High‐Resolution Transmission Electron Microscopy Re‐examined as a Tool in Solid State Chemistry
Author(s) -
Gruehn Reginald,
Mertin Wilhelm
Publication year - 1980
Publication title -
angewandte chemie international edition in english
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 0570-0833
DOI - 10.1002/anie.198005051
Subject(s) - stacking , atomic units , transmission electron microscopy , polyhedron , crystallography , lattice (music) , stacking fault , high resolution transmission electron microscopy , planar , resolution (logic) , high resolution , materials science , electron diffraction , electron microscope , electron tomography , chemical physics , nanotechnology , molecular physics , diffraction , scanning transmission electron microscopy , chemistry , physics , computer science , optics , geometry , mathematics , nuclear magnetic resonance , geology , computer graphics (images) , remote sensing , artificial intelligence , acoustics , quantum mechanics
Transmission electron microscopy (TEM) can be used with crystalline solids to obtain direct images of small structural groups comprising a few coordination polyhedra with resolution nearly down to atomic scale (“lattice imaging”). More exact knowledge of the conditions required for direct imaging, as well as improvements in the instruments themselves, have now made it possible to examine very small defect regions (microdomains), faults in the stacking sequence of structural groups or atom layers (planar or Wadsley defects), and isolated defects in narrowly delimited areas that may actually be below the dimensions of the unit cell. The structural principle of the very smallest ordered regions can even be determined when X‐ray structure analysis proves unable to do this. “Block structures” are particularly suitable as models for the testing and further development of the high‐resolution method; the detection of three‐dimensional, two‐dimensional, and one‐dimensional defects has been studied on such structures.