Premium
Ion Implantation into Semiconductors
Author(s) -
Fritzsche Christian
Publication year - 1978
Publication title -
angewandte chemie international edition in english
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.831
H-Index - 550
eISSN - 1521-3773
pISSN - 0570-0833
DOI - 10.1002/anie.197804961
Subject(s) - ion implantation , semiconductor , ion , annealing (glass) , doping , materials science , irradiation , optoelectronics , silicon , nanotechnology , atomic physics , chemistry , metallurgy , physics , nuclear physics , organic chemistry
Ion implantation is a method of introducing foreign atoms into solids that guarantees a high accuracy even with very small amounts and very short penetrations. It is basically a way of doping solids by bombarding them with accelerated ions, and its main application lies in the manufacture of semiconductor components. The action of implantation is closely connected with the accompanying radiation damage and its repair by annealing.