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Molecular Engineering on MoS 2 Enables Large Interlayers and Unlocked Basal Planes for High‐Performance Aqueous Zn‐Ion Storage
Author(s) -
Li Shengwei,
Liu Yongchang,
Zhao Xudong,
Cui Kaixuan,
Shen Qiuyu,
Li Ping,
Qu Xuanhui,
Jiao Lifang
Publication year - 2021
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.202108317
Subject(s) - basal plane , materials science , cathode , aqueous solution , ion , inert , intercalation (chemistry) , doping , battery (electricity) , conductivity , enhanced data rates for gsm evolution , nanotechnology , chemical engineering , optoelectronics , crystallography , chemistry , inorganic chemistry , computer science , engineering , physics , power (physics) , organic chemistry , quantum mechanics , telecommunications
Aqueous Zn‐storage behaviors of MoS 2 ‐based cathodes mainly rely on the ion‐(de)intercalation at edge sites but are limited by the inactive basal plane. Herein, an in‐situ molecular engineering strategy in terms of structure defects manufacturing and O‐doping is proposed for MoS 2 (designated as D‐MoS 2 ‐O) to unlock the inert basal plane, expand the interlayer spacing (from 6.2 to 9.6 Å), and produce abundant 1T‐phase. The tailored D‐MoS 2 ‐O with excellent hydrophilicity and high conductivity allows the 3D Zn 2+ transport along both the ab plane and c ‐axis, thus achieving the exceptional high rate capability. Zn 2+ diffusion through the basal plane is verified by DFT computations. As a proof of concept, the wearable quasi‐solid‐state rechargeable Zn battery employing the D‐MoS 2 ‐O cathode operates stably even under severe bending conditions, showing great application prospects. This work opens a new window for designing high‐performance layered cathode materials for aqueous Zn‐ion batteries.