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High Mobility Organic Lasing Semiconductor with Crystallization‐Enhanced Emission for Light‐Emitting Transistors
Author(s) -
Liu Dan,
Liao Qing,
Peng Qian,
Gao Haikuo,
Sun Qi,
De Jianbo,
Gao Can,
Miao Zhagen,
Qin Zhengsheng,
Yang Jiaxin,
Fu Hongbing,
Shuai Zhigang,
Dong Huanli,
Hu Wenping
Publication year - 2021
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.202108224
Subject(s) - lasing threshold , materials science , optoelectronics , photoluminescence , electron mobility , organic semiconductor , semiconductor , nanowire , laser , light emission , transistor , semiconductor laser theory , crystal (programming language) , optics , physics , wavelength , quantum mechanics , voltage , computer science , programming language
The development of high mobility organic laser semiconductors with strong emission is of great scientific and technical importance, but challenging. Herein, we present a high mobility organic laser semiconductor, 2,7‐diphenyl‐9 H ‐fluorene (LD‐1) showing unique crystallization‐enhanced emission guided by elaborately modulating its crystal growth process. The obtained one‐dimensional nanowires of LD‐1 show outstanding integrated properties including: high absolute photoluminescence quantum yield (PLQY) approaching 80 %, high charge carrier mobility of 0.08 cm 2 V −1 s −1 , Fabry‐Perot lasing characters with a low threshold of 86 μJ cm −2 and a high‐quality factor of ≈2400. Furthermore, electrically induced emission was obtained from an individual LD‐1 crystal nanowire‐based light‐emitting transistor due to the recombination of holes and electrons simultaneously injected into the nanowire, which provides a good platform for the study of electrically pumped organic lasers and other related ultrasmall integrated electrical‐driven photonic devices.