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Hypsochromic Shift of Multiple‐Resonance‐Induced Thermally Activated Delayed Fluorescence by Oxygen Atom Incorporation
Author(s) -
Tanaka Hiroyuki,
Oda Susumu,
Ricci Gaetano,
Gotoh Hajime,
Tabata Keita,
Kawasumi Ryosuke,
Beljonne David,
Olivier Yoann,
Hatakeyama Takuji
Publication year - 2021
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.202105032
Subject(s) - hypsochromic shift , intersystem crossing , quantum yield , photochemistry , photoluminescence , fluorescence , quantum efficiency , resonance fluorescence , homo/lumo , atom (system on chip) , oxygen , resonance (particle physics) , chemistry , materials science , excited state , optoelectronics , atomic physics , molecule , physics , optics , organic chemistry , computer science , singlet state , embedded system
Herein, we reported an ultrapure blue multiple‐resonance‐induced thermally activated delayed fluorescence (MR‐TADF) material ( ν‐DABNA‐O‐Me ) with a high photoluminescence quantum yield and a large rate constant for reverse intersystem crossing. Because of restricted π‐conjugation of the HOMO rather than the LUMO induced by oxygen atom incorporation, ν‐DABNA‐O‐Me shows a hypsochromic shift compared to the parent MR‐TADF material ( ν‐DABNA ). An organic light‐emitting diode based on this material exhibits an emission at 465 nm, with a small full‐width at half‐maximum of 23 nm and Commission Internationale de l'Eclairage coordinates of (0.13, 0.10), and a high maximum external quantum efficiency of 29.5 %. Moreover, ν‐DABNA‐O‐Me facilitates a drastically improved efficiency roll‐off and a device lifetime compared to ν‐DABNA , which demonstrates significant potential of the oxygen atom incorporation strategy.