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Frustrated Lewis Pair Chelation as a Vehicle for Low‐Temperature Semiconductor Element and Polymer Deposition
Author(s) -
Omaña Alvaro A.,
Green Rachel K.,
Kobayashi Ryo,
He Yingjie,
Antoniuk Evan R.,
Ferguson Michael J.,
Zhou Yuqiao,
Veinot Jonathan G. C.,
Iwamoto Takeaki,
Brown Alex,
Rivard Eric
Publication year - 2021
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.202012218
Subject(s) - borane , germanium , phosphine , chemistry , dimethylsilane , silicon , ligand (biochemistry) , boranes , deposition (geology) , thermal decomposition , hydride , substrate (aquarium) , polymer chemistry , boron , metal , organic chemistry , biochemistry , oceanography , receptor , sediment , geology , biology , catalysis , paleontology
Abstract The stabilization of silicon(II) and germanium(II) dihydrides by an intramolecular Frustrated Lewis Pair (FLP) ligand, PB , i Pr 2 P(C 6 H 4 )BCy 2 (Cy=cyclohexyl) is reported. The resulting hydride complexes [PB{SiH 2 }] and [PB{GeH 2 }] are indefinitely stable at room temperature, yet can deposit films of silicon and germanium, respectively, upon mild thermolysis in solution. Hallmarks of this work include: 1) the ability to recycle the FLP phosphine‐borane ligand ( PB ) after element deposition, and 2) the single‐source precursor [PB{SiH 2 }] deposits Si films at a record low temperature from solution (110 °C). The dialkylsilicon(II) adduct [PB{SiMe 2 }] was also prepared, and shown to release poly(dimethylsilane) [SiMe 2 ] n upon heating. Overall, this study introduces a “closed loop” deposition strategy for semiconductors that steers materials science away from the use of harsh reagents or high temperatures.