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Interfacial Strain Release from the WS 2 /CsPbBr 3 van der Waals Heterostructure for 1.7 V Voltage All‐Inorganic Perovskite Solar Cells
Author(s) -
Zhou Qingwei,
Duan Jialong,
Yang Xiya,
Duan Yanyan,
Tang Qunwei
Publication year - 2020
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.202010252
Subject(s) - materials science , perovskite (structure) , dangling bond , van der waals force , heterojunction , chemical engineering , optoelectronics , crystallography , chemistry , organic chemistry , molecule , silicon , engineering
Perovskite lattice distortion induced by residual tensile strain from the thermal expansion mismatch between the electron‐transporting layer (ETL) and perovskite film causes a sluggish charge extraction and transfer dynamics in all‐inorganic CsPbBr 3 perovskite solar cells (PSCs) because of their higher crystallization temperatures and thermal expansion coefficients. Herein, the interfacial strain is released by fabricating a WS 2 /CsPbBr 3 van der Waals heterostructure owing to their matched crystal lattice structure and the atomically smooth dangling bond‐free surface to act as a lubricant between ETL and CsPbBr 3 perovskite. Arising from the strain‐released interface and condensed perovskite lattice, the best device achieves an efficiency of 10.65 % with an ultrahigh open‐circuit voltage of 1.70 V and significantly improved stability under persistent light irradiation and humidity (80 %) attack over 120 days.