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Boosting the Quantum Efficiency of Ultralong Organic Phosphorescence up to 52 % via Intramolecular Halogen Bonding
Author(s) -
Yang Zhan,
Xu Chao,
Li Wenlang,
Mao Zhu,
Ge Xiangyu,
Huang Qiuyi,
Deng Huangjun,
Zhao Juan,
Gu Feng Long,
Zhang Yi,
Chi Zhenguo
Publication year - 2020
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.202007343
Subject(s) - intersystem crossing , intramolecular force , phosphorescence , halogen , halogen bond , quantum efficiency , molecule , materials science , photochemistry , phosphorescent organic light emitting diode , excited state , nanotechnology , chemistry , chemical physics , oled , optoelectronics , atomic physics , singlet state , physics , fluorescence , stereochemistry , organic chemistry , quantum mechanics , hydrogen bond , alkyl , layer (electronics)
Ultralong organic phosphorescence (UOP) has attracted increasing attention due to its potential applications in optoelectronics, bioelectronics, and security protection. However, achieving UOP with high quantum efficiency (QE) over 20 % is still full of challenges due to intersystem crossing (ISC) and fast non‐radiative transitions in organic molecules. Here, we present a novel strategy to enhance the QE of UOP materials by modulating intramolecular halogen bonding via structural isomerism. The QE of CzS2Br reaches up to 52.10 %, which is the highest afterglow efficiency reported so far. The crucial reason for the extraordinary QE is intramolecular halogen bonding, which can not only effectively enhance ISC by promoting spin–orbit coupling, but also greatly confine motions of excited molecules to restrict non‐radiative pathways. This work provides a reasonable strategy to develop highly efficient UOP materials for practical applications.