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High Compression‐Induced Conductivity in a Layered Cu–Br Perovskite
Author(s) -
Jaffe Adam,
Mack Stephanie A.,
Lin Yu,
Mao Wendy L.,
Neaton Jeffrey B.,
Karunadasa Hemamala I.
Publication year - 2020
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201912575
Subject(s) - perovskite (structure) , halide , conductivity , density functional theory , valence (chemistry) , band gap , chemistry , electronic structure , atomic orbital , analytical chemistry (journal) , crystallography , materials science , inorganic chemistry , computational chemistry , optoelectronics , organic chemistry , chromatography , physics , quantum mechanics , electron
Abstract We show that the onset pressure for appreciable conductivity in layered copper‐halide perovskites can decrease by ca. 50 GPa upon replacement of Cl with Br. Layered Cu–Cl perovskites require pressures >50 GPa to show a conductivity of 10 −4 S cm −1 , whereas here a Cu–Br congener, (EA) 2 CuBr 4 (EA=ethylammonium), exhibits conductivity as high as 2×10 −3 S cm −1 at only 2.6 GPa, and 0.17 S cm −1 at 59 GPa. Substitution of higher‐energy Br 4p for Cl 3p orbitals lowers the charge‐transfer band gap of the perovskite by 0.9 eV. This 1.7 eV band gap decreases to 0.3 eV at 65 GPa. High‐pressure X‐ray diffraction, optical absorption, and transport measurements, and density functional theory calculations allow us to track compression‐induced structural and electronic changes. The notable enhancement of the Br perovskite's electronic response to pressure may be attributed to more diffuse Br valence orbitals relative to Cl orbitals. This work brings the compression‐induced conductivity of Cu‐halide perovskites to more technologically accessible pressures.