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Dislocations that Decrease Size Mismatch within the Lattice Leading to Ultrawide Band Gap, Large Second‐Order Susceptibility, and High Nonlinear Optical Performance of AgGaS 2
Author(s) -
Zhou HuiMin,
Xiong Lin,
Chen Ling,
Wu LiMing
Publication year - 2019
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201903976
Subject(s) - band gap , figure of merit , materials science , conduction band , lattice (music) , nonlinear optical , superposition principle , valence (chemistry) , optics , nonlinear system , optoelectronics , chemistry , physics , organic chemistry , electron , quantum mechanics , acoustics
The essence of rational design syntheses of functional inorganic materials lies in understanding and control of crystal structures that determine the physical properties. AgGaS 2 has the highest figure of merit for IR nonlinear optical interactions to date, but suffers low laser‐induced damage threshold (LIDT). The partial Li substitution of Ag atoms is now shown to push up the bottom of the conduction band and flatten the top of the valence band, leading to an ultrawide band gap of 3.40 eV (record high for AgGaS 2 , indicating a transparency edging nearly 180 nm shorter than that of AgGaS 2 ), which gives Li 0.60 Ag 0.40 GaS 2 a LIDT 8.6 times stronger when AgGaS 2 is compared. Li 0.60 Ag 0.40 GaS 2 exhibits 1.1 times stronger nonlinear susceptibility, which is because the energy‐favorable Li substitution gradually decreases the sulfur dislocation in the lattice, which allows a better geometric superposition of nonlinear optical tensors.