Premium
Simultaneous Manipulation of O‐Doping and Metal Vacancy in Atomically Thin Zn 10 In 16 S 34 Nanosheet Arrays toward Improved Photoelectrochemical Performance
Author(s) -
Meng Linxing,
Rao Dewei,
Tian Wei,
Cao Fengren,
Yan Xiaohong,
Li Liang
Publication year - 2018
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201811632
Subject(s) - overpotential , nanosheet , materials science , doping , tin oxide , vacancy defect , atomic layer deposition , oxide , thin film , density functional theory , hydrothermal circulation , chemical engineering , tin , metal , analytical chemistry (journal) , nanotechnology , optoelectronics , electrode , chemistry , electrochemistry , crystallography , computational chemistry , metallurgy , chromatography , engineering
The facile hydrothermal synthesis of Zn 10 In 16 S 34 atomically thin nanosheet arrays on fluorine‐doped tin oxide glass (FTO) substrates is presented. Through controlling heat treatment in air, O‐doping and Zn, S vacancies were simultaneously introduced in Zn 10 In 16 S 34 nanosheets with adjusted phase, morphology, chemical compositions, and energy level distribution. The surface defect states are passivated by depositing ultrathin Al 2 O 3 film by atomic layer deposition technology. The performance of Zn 10 In 16 S 34 photoanodes is largely improved, with 4.7 times higher current density and reduced onset potential. The experimental results and density functional theory calculations indicate that the enhancement is attributed to the fast photoexcited electron–hole pair separation, decreased surface transfer impedance, prolonged carrier lifetime, and reduced overpotential of oxygen evolution reaction.