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Germanium Wafers Possessing Facet‐Dependent Electrical Conductivity Properties
Author(s) -
Hsieh PeiLun,
Lee AnTing,
Chen LihJuann,
Huang Michael H.
Publication year - 2018
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201809132
Subject(s) - germanium , facet (psychology) , materials science , electrical conductor , wafer , electrical resistivity and conductivity , conductivity , fabrication , density functional theory , optoelectronics , current density , nanotechnology , silicon , chemistry , composite material , computational chemistry , electrical engineering , physics , social psychology , alternative medicine , personality , pathology , big five personality traits , engineering , quantum mechanics , medicine , psychology
Electrical conductivity properties of Ge {100}, {110}, {111}, and {211} facets have been measured by breaking Ge (100) and (111) wafers to expose {110} and {211} surfaces and contacting the different facets with tungsten probes. Ge {111} and {211} faces are far more conductive than the already conductive Ge {100} and {110} faces, matching with recent density functional theory (DFT) predictions. Asymmetric I – V curves resembling those of p ‐ n junctions have been collected for the {110}/{111} and {110}/{211} facet combinations. The current‐rectifying effects stem from different degrees of surface band bending for the highly and less conductive faces and the direction of current flow. This work demonstrates that germanium wafers also possess facet‐dependent electrical conductivity responses that can be utilized in the fabrication of novel fin field‐effect transistors (finFET).