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Manipulating Band Structure through Reconstruction of Binary Metal Sulfide for High‐Performance Thermoelectrics in Solution‐Synthesized Nanostructured Bi 13 S 18 I 2
Author(s) -
Xu Biao,
Feng Tianli,
Agne Matthias T.,
Tan Qing,
Li Zhe,
Imasato Kazuki,
Zhou Lin,
Bahk JeHyeong,
Ruan Xiulin,
Snyder G. Jeffery,
Wu Yue
Publication year - 2018
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201713223
Subject(s) - thermoelectric materials , materials science , semiconductor , figure of merit , thermoelectric effect , chalcogen , phonon , sulfide , crystal structure , nanotechnology , binary number , electronic band structure , electronic structure , optoelectronics , condensed matter physics , crystallography , chemistry , physics , thermodynamics , arithmetic , mathematics , metallurgy
Reconstructing canonical binary compounds by inserting a third agent can significantly modify their electronic and phonon structures. Therefore, it has inspired the semiconductor communities in various fields. Introducing this paradigm will potentially revolutionize thermoelectrics as well. Using a solution synthesis, Bi 2 S 3 was rebuilt by adding disordered Bi and weakly bonded I. These new structural motifs and the altered crystal symmetry induce prominent changes in electrical and thermal transport, resulting in a great enhancement of the figure of merit. The as‐obtained nanostructured Bi 13 S 18 I 2 is the first non‐toxic, cost‐efficient, and solution‐processable n‐type material with z T =1.0.
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