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Silicon Wafers with Facet‐Dependent Electrical Conductivity Properties
Author(s) -
Tan ChihShan,
Hsieh PeiLun,
Chen LihJuann,
Huang Michael H.
Publication year - 2017
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201709020
Subject(s) - facet (psychology) , materials science , silicon , conductivity , wafer , electrical conductor , thermal conduction , electrical resistivity and conductivity , crystal (programming language) , optoelectronics , condensed matter physics , chemistry , composite material , electrical engineering , psychology , social psychology , physics , personality , computer science , big five personality traits , programming language , engineering
By breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets, electrical conductivity measurements on single and different silicon crystal faces were performed through contacts with two tungsten probes. While Si {100} and {110} faces are barely conductive at low applied voltages, as expected, the Si {112} surface is highly conductive and Si {111} surface also shows good conductivity. Asymmetrical I – V curves have been recorded for the {111}/{112}, {111}/{110}, and {112}/{110} facet combinations because of different degrees of conduction band bending at these crystal surfaces presenting different barrier heights to current flow. In particular, the {111}/{110} and {112}/{110} facet combinations give I – V curves resembling those of p–n junctions, suggesting a novel field effect transistor design is possible capitalizing on the pronounced facet‐dependent electrical conductivity properties of silicon.