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High‐Performance CsPb 1− x Sn x Br 3 Perovskite Quantum Dots for Light‐Emitting Diodes
Author(s) -
Wang HungChia,
Wang Weigao,
Tang AnCih,
Tsai HsinYu,
Bao Zhen,
Ihara Toshiyuki,
Yarita Naoki,
Tahara Hirokazu,
Kanemitsu Yoshihiko,
Chen Shuming,
Liu RuShi
Publication year - 2017
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201706860
Subject(s) - photoluminescence , perovskite (structure) , quantum dot , materials science , trion , electroluminescence , quantum yield , light emitting diode , luminescence , optoelectronics , quantum efficiency , absorption (acoustics) , ultrafast laser spectroscopy , spectroscopy , analytical chemistry (journal) , nanotechnology , chemistry , crystallography , fluorescence , optics , physics , layer (electronics) , quantum mechanics , chromatography , composite material
All inorganic CsPbBr 3 perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot‐injection method to partially replace the toxic Pb 2+ with highly stable Sn 4+ . Meanwhile, the absolute photoluminescence quantum yield of CsPb 1− x Sn x Br 3 increased from 45 % to 83 % with Sn IV substitution. The transient absorption (TA) exciton dynamics in undoped CsPbBr 3 and CsPb 0.67 Sn 0.33 Br 3 QDs at various excitation fluences were determined by femtosecond transient absorption, time‐resolved photoluminescence, and single‐dot spectroscopy, providing clear evidence for the suppression of trion generation by Sn doping. These highly luminescent CsPb 0.67 Sn 0.33 Br 3 QDs emit at 517 nm. A device based on these QDs exhibited a luminance of 12 500 cd m −2 , a current efficiency of 11.63 cd A −1 , an external quantum efficiency of 4.13 %, a power efficiency of 6.76 lm w −1 , and a low turn‐on voltage of 3.6 V, which are the best values among reported tin‐based perovskite quantum‐dot LEDs.