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Repairing Nanoparticle Surface Defects
Author(s) -
Marino Emanuele,
Kodger Thomas E.,
Crisp Ryan W.,
Timmerman Dolf,
MacArthur Katherine E.,
Heggen Marc,
Schall Peter
Publication year - 2017
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201705685
Subject(s) - chalcogenide , materials science , electrical conductor , semiconductor , nanoparticle , nanomaterials , nanotechnology , nanostructure , annealing (glass) , doping , charge carrier , metal , optoelectronics , composite material , metallurgy
Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We utilized atomically thin semiconductor nanoplatelets as a convenient platform for studying, both microscopically and spectroscopically, the development of defects during ligand exchange with the conductive ligands Na 4 SnS 4 and (NH 4 ) 4 Sn 2 S 6 . These defects can be repaired via mild chemical or thermal routes, through the addition of L‐type ligands or wet annealing, respectively. This results in a higher‐quality, conductive, colloidally stable nanomaterial that may be used as the active film in optoelectronic devices.