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Synthesis of WO n ‐WX 2 ( n =2.7, 2.9; X=S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light‐Emitting Diodes
Author(s) -
Han Shikui,
Yang Xuyong,
Zhu Yihan,
Tan Chaoliang,
Zhang Xiao,
Chen Junze,
Huang Ying,
Chen Bo,
Luo Zhimin,
Ma Qinglang,
Sindoro Melinda,
Zhang Hao,
Qi Xiaoying,
Li Hai,
Huang Xiao,
Huang Wei,
Sun Xiao Wei,
Han Yu,
Zhang Hua
Publication year - 2017
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201705617
Subject(s) - heterojunction , quantum dot , nanomaterials , materials science , nanotechnology , optoelectronics , diode , nanowire , light emitting diode , nanoparticle , quantum efficiency , layer (electronics) , anode , chemistry , electrode
Abstract Preparation of two‐dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WO n ‐WX 2 ( n =2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WO n nanomaterials. The WO n ‐WX 2 heterostructures are composed of WO 2.9 nanoparticles (NPs) or WO 2.7 nanowires (NWs) grown together with single‐ or few‐layer WX 2 nanosheets (NSs). As a proof‐of‐concept application, the WO n ‐WX 2 heterostructures are used as the anode interfacial buffer layer for green quantum dot light‐emitting diodes (QLEDs). The QLED prepared with WO 2.9 NP‐WSe 2 NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.