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The Unique Electronic Structure of Mg 2 Si: Shaping the Conduction Bands of Semiconductors with Multicenter Bonding
Author(s) -
Mizoguchi Hiroshi,
Muraba Yoshinori,
Fredrickson Daniel C.,
Matsuishi Satoru,
Kamiya Toshio,
Hosono Hideo
Publication year - 2017
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201701681
Subject(s) - isostructural , semiconductor , thermal conduction , doping , band gap , electronic band structure , chemistry , conduction band , conductivity , atomic orbital , phase (matter) , condensed matter physics , crystallography , semimetal , electronic structure , chemical physics , materials science , computational chemistry , crystal structure , electron , optoelectronics , physics , organic chemistry , quantum mechanics , composite material
Abstract The electronic structures of the antifluorite‐type compound Mg 2 Si is described in which a sublattice of short cation–cation contacts creates a very low conduction band minimum. Since Mg 2 Si shows n‐type conductivity without intentional carrier doping, the present result indicates that the cage defined by the cations plays critical roles in carrier transport similar to those of inorganic electrides, such as 12 CaO⋅7 Al 2 O 3 :e − and Ca 2 N. A distinct difference in the location of conduction band minimum between Mg 2 Si and the isostructural phase Na 2 S is explained in terms of factors such as the differing interaction strengths of the Si/S 3s orbitals with the cation levels, with the more core‐like character of the S 3s leading to a relatively low conduction band energy at the Γ point. Based on these results and previous research on electrides, approaches can be devised to control the energy levels of cation sublattices in semiconductors.