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Highly Active GaN‐Stabilized Ta 3 N 5 Thin‐Film Photoanode for Solar Water Oxidation
Author(s) -
Zhong Miao,
Hisatomi Takashi,
Sasaki Yutaka,
Suzuki Sayaka,
Teshima Katsuya,
Nakabayashi Mamiko,
Shibata Naoya,
Nishiyama Hiroshi,
Katayama Masao,
Yamada Taro,
Domen Kazunari
Publication year - 2017
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201700117
Subject(s) - photocurrent , materials science , nitride , water splitting , chemical engineering , coating , electrolyte , optoelectronics , solar energy , photocatalysis , thin film , nanotechnology , electrode , layer (electronics) , chemistry , catalysis , ecology , biochemistry , engineering , biology
Ta 3 N 5 is a very promising photocatalyst for solar water splitting because of its wide spectrum solar energy utilization up to 600 nm and suitable energy band position straddling the water splitting redox reactions. However, its development has long been impeded by poor compatibility with electrolytes. Herein, we demonstrate a simple sputtering‐nitridation process to fabricate high‐performance Ta 3 N 5 film photoanodes owing to successful synthesis of the vital TaO δ precursors. An effective GaN coating strategy is developed to remarkably stabilize Ta 3 N 5 by forming a crystalline nitride‐on‐nitride structure with an improved nitride/electrolyte interface. A stable, high photocurrent density of 8 mA cm −2 was obtained with a CoPi/GaN/Ta 3 N 5 photoanode at 1.2 V RHE under simulated sunlight, with O 2 and H 2 generated at a Faraday efficiency of unity over 12 h. Our vapor‐phase deposition method can be used to fabricate high‐performance (oxy)nitrides for practical photoelectrochemical applications.