Premium
Versatile p‐Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes
Author(s) -
Han TaeHee,
Kwon SungJoo,
Li Nannan,
Seo HongKyu,
Xu Wentao,
Kim Kwang S.,
Lee TaeWoo
Publication year - 2016
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201600414
Subject(s) - graphene , anode , doping , materials science , ohmic contact , work function , electrode , sheet resistance , optoelectronics , transmittance , nanotechnology , diode , chemical engineering , layer (electronics) , chemistry , engineering
Abstract We report effective solution‐processed chemical p‐type doping of graphene using trifluoromethanesulfonic acid (CF 3 SO 3 H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70 % decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air‐stability at the same time. The TFMS‐doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light‐emitting diode with the TFMS‐doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A −1 , 80.7 lm W −1 ) than those with conventional ITO (84.8 cd A −1 , 73.8 lm W −1 ).