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Flexible Near‐Infrared Photovoltaic Devices Based on Plasmonic Hot‐Electron Injection into Silicon Nanowire Arrays
Author(s) -
Liu Dong,
Yang Dong,
Gao Yang,
Ma Jun,
Long Ran,
Wang Chengming,
Xiong Yujie
Publication year - 2016
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201600279
Subject(s) - plasmon , materials science , optoelectronics , photovoltaic system , nanowire , silicon , quantum efficiency , fabrication , nanotechnology , photovoltaics , near infrared spectroscopy , energy conversion efficiency , optics , medicine , ecology , alternative medicine , physics , pathology , biology
Abstract The development of flexible near‐infrared (NIR) photovoltaic (PV) devices containing silicon meets the strong demands for solar utilization, portability, and sustainable manufacture; however, improvements in the NIR light absorption and conversion efficiencies in ultrathin crystalline Si are required. We have developed an approach to improve the quantum efficiency of flexible PV devices in the NIR spectral region by integrating Si nanowire arrays with plasmonic Ag nanoplates. The Ag nanoplates can directly harvest and convert NIR light into plasmonic hot electrons for injection into Si, while the Si nanowire arrays offer light trapping. Taking the wavelength of 800 nm as an example, the external quantum efficiency has been improved by 59 % by the integration Ag nanoplates. This work provides an alternative strategy for the design and fabrication of flexible NIR PVs.