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Solution Layer Deposition: A Technique for the Growth of Ultra‐Pure Manganese Oxides on Silica at Room Temperature
Author(s) -
Cure Jérémy,
Piettre Kilian,
Coppel Yannick,
Beche Eric,
Esvan Jérôme,
Collière Vincent,
Chaudret Bruno,
Fau Pierre
Publication year - 2016
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201509715
Subject(s) - manganese , layer (electronics) , silicon , x ray photoelectron spectroscopy , materials science , amorphous solid , high resolution transmission electron microscopy , oxide , atomic layer deposition , substrate (aquarium) , deposition (geology) , chemical engineering , metal , thin film , inorganic chemistry , carbon fibers , chemistry , nanotechnology , transmission electron microscopy , organic chemistry , composite number , metallurgy , paleontology , oceanography , sediment , geology , engineering , biology , composite material
With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high‐purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal–organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal–organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid‐state 29 Si MAS NMR, XPS, SIMS, and HRTEM.