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Semiconducting Group 15 Monolayers: A Broad Range of Band Gaps and High Carrier Mobilities
Author(s) -
Zhang Shengli,
Xie Meiqiu,
Li Fengyu,
Yan Zhong,
Li Yafei,
Kan Erjun,
Liu Wei,
Chen Zhongfang,
Zeng Haibo
Publication year - 2016
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201507568
Subject(s) - phosphorene , monolayer , semiconductor , band gap , materials science , mobilities , direct and indirect band gaps , electron mobility , optoelectronics , chemical physics , condensed matter physics , nanotechnology , chemistry , physics , social science , sociology
Abstract Optoelectronic applications require materials both responsive to objective photons and able to transfer carriers, so new two‐dimensional (2D) semiconductors with appropriate band gaps and high mobilities are highly desired. A broad range of band gaps and high mobilities of a 2D semiconductor family, composed of monolayer of Group 15 elements (phosphorene, arsenene, antimonene, bismuthene) is presented. The calculated binding energies and phonon band dispersions of 2D Group 15 allotropes exhibit thermodynamic stability. The energy band gaps of 2D semiconducting Group 15 monolayers cover a wide range from 0.36 to 2.62 eV, which are crucial for broadband photoresponse. Significantly, phosphorene, arsenene, and bismuthene possess carrier mobilities as high as several thousand cm 2 V −1 s −1 . Combining such broad band gaps and superior carrier mobilities, 2D Group 15 monolayers are promising candidates for nanoelectronics and optoelectronics.