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Photomagnetic Response in Highly Conductive Iron(II) Spin‐Crossover Complexes with TCNQ Radicals
Author(s) -
Phan Hoa,
Benjamin Shermane M.,
Steven Eden,
Brooks James S.,
Shatruk Michael
Publication year - 2015
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201408680
Subject(s) - spin crossover , tetracyanoquinodimethane , chemistry , conductivity , cationic polymerization , radical , semiconductor , amine gas treating , crystallography , bistability , band gap , ion , radical ion , photochemistry , materials science , polymer chemistry , molecule , organic chemistry , optoelectronics
Co‐crystallization of a cationic Fe II complex with a partially charged TCNQ . δ − (7,7′,8,8′‐tetracyanoquinodimethane) radical anion has afforded molecular materials that behave as narrow band‐gap semiconductors, [Fe(tpma)(xbim)](X)(TCNQ) 1.5 ⋅DMF (X=ClO 4 − or BF 4 − ; tpma=tris(2‐pyridylmethyl)amine, xbim=1,1′‐(α,α′‐ o ‐xylyl)‐2,2′‐bisimidazole). Remarkably, these complexes also exhibit temperature‐and light‐driven spin crossover at the Fe II center, and are thus the first structurally defined magnetically bistable semiconductors assembled with the TCNQ . δ − radical anion. Transport measurements reveal the conductivity of 0.2 S cm −1 at 300 K, with the low activation energy of 0.11 eV.