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Designing p‐Type Semiconductor–Metal Hybrid Structures for Improved Photocatalysis
Author(s) -
Wang Lili,
Ge Jing,
Wang Ailun,
Deng Mingsen,
Wang Xijun,
Bai Song,
Li Rui,
Jiang Jun,
Zhang Qun,
Luo Yi,
Xiong Yujie
Publication year - 2014
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201310635
Subject(s) - semiconductor , schottky barrier , schottky diode , work function , materials science , optoelectronics , photocatalysis , metal–semiconductor junction , charge carrier , nanotechnology , chemistry , diode , biochemistry , layer (electronics) , catalysis
A practical strategy is proposed to facilitate the migration of holes in semiconductor (the low rate of which limits photocatalytic efficiency) by taking advantage of the Schottky barrier between p‐type semiconductor and metal. A high work function is found to serve as an important selection rule for building such desirable Schottky junction between semiconductor surface facets and metal. The intrinsic charge spatial distribution has to be taken into account when selecting the facets, as it results in accumulation of photoexcited electrons and holes on certain semiconductor facets. Importantly, the facets have a high work function, the same characteristic required for the formation of Schottky junction in a p‐type semiconductor–metal hybrid structure. As a result, the semiconductor crystals in the hybrid design may be better enclosed by single facets with high work function, so as to synergize the two effects: Schottky barrier versus charge spatial separation.