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Enhancement of the Photoresponse in Organic Field‐Effect Transistors by Incorporating Thin DNA Layers
Author(s) -
Zhang Yuan,
Wang Mingfeng,
Collins Samuel D.,
Zhou Huiqiong,
Phan Hung,
Proctor Christopher,
Mikhailovsky Alexander,
Wudl Fred,
Nguyen ThucQuyen
Publication year - 2014
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201306763
Subject(s) - photocurrent , field effect transistor , irradiation , photochemistry , dissociation (chemistry) , active layer , materials science , optoelectronics , exciton , layer (electronics) , organic field effect transistor , chemistry , ohmic contact , transistor , analytical chemistry (journal) , nanotechnology , thin film transistor , organic chemistry , physics , quantum mechanics , voltage , nuclear physics
A mechanistic study of the DNA interfacial layer that enhances the photoresponse in n‐type field‐effect transistors (FET) and lateral photoconductors using a solution‐processed fullerene derivative embedded with disperse‐red dye, namely PCBDR, is reported. Incorporation of the thin DNA layer simultaneously leads to increasing the electron injection from non‐Ohmic contacts into the PCBDR active layer in dark and to increasing the photocurrent under irradiation. Such features lead to the observation of the enhancement of the photoresponsivity in PCBDR FETs up to 10 3 . Kelvin probe microscopy displays that in the presence of the DNA layer, the surface potential of PCBDR has a greater change in response to irradiation, which is rationalized by a larger number of photoinduced surface carriers. Transient absorption spectroscopy confirms that the increase in photoinduced carriers in PCBDR under irradiation is primarily ascribed to the increase in exciton dissociation rates through the PCBDR/DNA interface and this process can be assisted by the interfacial dipole interaction.