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At the Border of Intermetallic Compounds and Transition‐Metal Oxides: Crystal Intergrowth of the Zintl Phase Cs 4 Ge 9 and Cs 2 WO 4 or Cs 3 VO 4 as well as Nine‐Atom Cluster Relocation in the Solid State
Author(s) -
Hlukhyy Viktor,
Fässler Thomas F.
Publication year - 2012
Publication title -
angewandte chemie
Language(s) - German
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.201105033
Subject(s) - intermetallic , crystallography , raman spectroscopy , cluster (spacecraft) , chemistry , transition metal , solid state , atom (system on chip) , metal , materials science , physics , metallurgy , engineering , computer science , catalysis , alloy , embedded system , programming language , biochemistry , optics
Kristall‐Engineering : Über die Synthesen, Kristallstrukturen, Raman‐Spektren und thermischen Eigenschaften von Cs 10 [Ge 9 ] 2 [WO 4 ] und Cs 11 [Ge 9 ] 2 [VO 4 ], die [Ge 9 ] 4− ‐Cluster und Oxometallat‐Anionen [ M O 4 ] x − ( M =W and V) enthalten, wird berichtet. Das Bild zeigt ein Raman‐Spektrum von Einkristallen eines Cs 10 [Ge 9 ] 2 [WO 4 ]‐Doppelsalzes sowie die Umlagerung des Ge 9 ‐Clusters in Cs 11 [Ge 9 ] 2 [VO 4 ] bei Temperaturerhöhung.

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