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Metal Organic Chemical Vapor Deposition (MOCVD) Perspectives and Prospects
Author(s) -
Williams John O.
Publication year - 1989
Publication title -
angewandte chemie
Language(s) - English
Resource type - Journals
eISSN - 1521-3757
pISSN - 0044-8249
DOI - 10.1002/ange.19891010853
Subject(s) - chemical vapor deposition , metalorganic vapour phase epitaxy , metal , combustion chemical vapor deposition , chemistry , materials science , deposition (geology) , inorganic chemistry , nanotechnology , chemical engineering , thin film , organic chemistry , epitaxy , carbon film , layer (electronics) , geology , paleontology , sediment , engineering
Review: Thin film epitaxial semiconductor structures of widely varying but controlled compositions and thickness can be prepared using MOCVD. The performance of the method is gauged against molecular beam epitaxy (MBE) and spray pyrolysis, and comment is made on the direction in which this area of research is going, for example, towards the processing of high‐ T c superconductors and ferroelectric oxides.