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Surface‐Emitting Lasers: Multiwavelength GaN‐Based Surface‐Emitting Lasers and Their Design Principles (Ann. Phys. 1/2020)
Author(s) -
Weng Guoen,
Chen Shaoqiang,
Mei Yang,
Liu Yuejun,
Akiyama Hidefumi,
Hu Xiaobo,
Liu Jianping,
Zhang Baoping,
Chu Junhao
Publication year - 2020
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.202070010
Subject(s) - lasing threshold , laser , optoelectronics , materials science , quantum tunnelling , surface (topology) , quantum well , photon , optics , physics , geometry , mathematics
In article number 1900308, Shaoqiang Chen and co‐workers propose a controllable multiwavelength GaN‐based vertical‐cavity surface‐emitting laser using asymmetric quantum well or multistacked size‐varied quantum dot active regions. The components and intensity of the multi‐laser outputs are demonstrated to be continuously adjustable. The analysis reveals that the electron–photon interaction, carrier tunneling, and photon reabsorption play a crucial role in the multiwavelength lasing processes. The design principles of the proposed active regions are also elaborated upon to provide guidelines for high performance multiwavelength emissions in GaN‐based surface‐emitting lasers.