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Strain‐Gradient‐Induced Modulation of Carrier Density and Mobility at the LaAlO 3 /SrTiO 3 Heterointerface
Author(s) -
Zhang Zhe,
Jiang Weimin,
Liu Kejian,
Liu Mingrui,
Meng Jianchao,
Wu Lingyan,
Shao Tingna,
Ling Jingzhuo,
Yao Chunli,
Xiong Changmin,
Dou Ruifen,
Nie Jiacai
Publication year - 2020
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.202000155
Subject(s) - materials science , charge carrier density , strain (injury) , electron mobility , tensile strain , condensed matter physics , bending , ultimate tensile strength , substrate (aquarium) , oxide , composite material , optoelectronics , physics , doping , medicine , oceanography , metallurgy , geology
A strain gradient induced by mechanical bending on a SrTiO 3 substrate is demonstrated, and has a pronounced influence on the carrier density and mobility of the interfacial 2D electron gas at the LaAlO 3 /SrTiO 3 heterointerface. Tensile and compressive strain gradients represent two states of upward and downward bending. Under the tensile strain gradient, the carrier density decreases and the mobility has about 200% increase. Conversely, under the compressive strain gradient, the mobility decreases and the carrier density increases by up to 107%. These results demonstrate a range of opportunities to modulate the carrier density and mobility at oxide heterointerface and open up a promising way for further research on application of oxide devices.