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Spin Polarization and Spin‐Flip Through Phosphorene Superlattice
Author(s) -
Boroughani Atena,
Faizabadi Edris
Publication year - 2019
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201900202
Subject(s) - spin polarization , superlattice , spintronics , phosphorene , condensed matter physics , spin engineering , physics , spinplasmonics , spin (aerodynamics) , spin transistor , polarization (electrochemistry) , spin hall effect , spin flip , electron , spin pumping , quantum mechanics , ferromagnetism , band gap , chemistry , scattering , thermodynamics
The spin‐dependent transport properties, including spin polarization and spin‐flip for phosphorene superlattice in the presence of an extrinsic Rashba spin‐orbit interaction (RSOI) based on the transfer matrix method, are studied. The results show that the number of barriers in the superlattice structure plays a dominant role in output spin polarization, which can be used in designing optimized spintronic devices. In addition, by controlling on the Rashba strength, an incident spin‐up electron can be transmitted as a spin‐down electron. Also, it enables to convert the unpolarized incident electronic beam (with zero spin polarization) into an arbitrary output spin polarization, which plays a significant role in qubit circuits.