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Trapped Carrier Scattering: Trapped Carrier Scattering and Charge Transport in High‐Mobility Amorphous Metal Oxide Thin‐Film Transistors (Ann. Phys. 12/2018)
Author(s) -
Wang Xiao,
Dodabalapur Ananth
Publication year - 2018
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201870044
Subject(s) - scattering , carrier scattering , materials science , electron , charge carrier , thin film transistor , electron mobility , transistor , semiconductor , condensed matter physics , amorphous solid , thin film , optoelectronics , atomic physics , physics , nanotechnology , optics , chemistry , layer (electronics) , quantum mechanics , voltage , organic chemistry
In article number 1800341 , Ananth Dodabalapur and Xiao Wang extend the multiple trap and release model to include extended‐state transport with scattering and screening. They show that trapped charge carrier scattering is important for and unique to thin‐film transistors, as trapped carriers are efficient scattering centers in disordered semiconductors. Electrons in trap states in a thin‐film transistor semiconducting channel are shown, as well as a few in thermally excited extended states. The electrons in extended states are shown as either propagating scattering‐free or as being scattered by the immobile trapped electrons.