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Room‐Temperature Phosphorescence in Metal‐Free Organic Materials
Author(s) -
Ma Huili,
Lv Anqi,
Fu Lishun,
Wang Shan,
An Zhongfu,
Shi Huifang,
Huang Wei
Publication year - 2019
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201800482
Subject(s) - phosphorescence , intersystem crossing , materials science , phosphorescent organic light emitting diode , singlet state , nanotechnology , optoelectronics , photochemistry , chemistry , physics , atomic physics , fluorescence , optics , excited state
Purely organic materials with room‐temperature phosphorescence (RTP) have attracted a growing interest for their potential applications in biological imaging, digital encryption, optoelectronic devices, and so on. To date, many strategies have succeeded in designing efficient organic RTP materials by overcoming the spin‐forbidden transition between singlet and triplet states. However, the underlying mechanisms of RTP still remain ambiguous. Such spin prohibition in phosphorescence are clarified, herein, from the perspective of perturbation theory, helping to understand the intrinsic relationship among various phosphorescence parameters, like phosphorescence efficiency, lifetime, intersystem crossing rate, as well as radiative and nonradiative rates. Taking into consideration the recent progress in organic RTP materials, these factors are further illustrated by a selection of the most relevant molecules. In addition, some novel RTP phenomena are also reviewed, thus providing an excellent guideline to constructing efficient RTP materials.