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Single Metal Ohmic and Rectifying Contacts to ZnO Nanowires: A Defect Based Approach
Author(s) -
Jarjour Alexander,
Cox Jon W.,
Ruane William T.,
Wenckstern Holger,
Grundmann Marius,
Brillson Leonard J.
Publication year - 2018
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201700335
Subject(s) - ohmic contact , nanowire , materials science , cathodoluminescence , schottky diode , optoelectronics , schottky barrier , annealing (glass) , semiconductor , nanotechnology , focused ion beam , diode , ion , composite material , chemistry , layer (electronics) , organic chemistry , luminescence
Abstract Ohmic and rectifying metal contacts to semiconductor nanowires are integral to electronic device structures and typically require different metals and different process techniques to form. Here we show how a noble metal ion beam of Pt commonly used to pattern conducting contacts in electron microscopes can form both ohmic and Schottky/blocking contacts on ZnO nanowires by controlling native point defects at the intimate metal‐semiconductor interface. Spatially‐resolved cathodoluminescence spectroscopy on a nanoscale both laterally and in depth gauges the nature, density, and spatial distribution of specific native point defects inside the nanowires and at their metal interfaces. Combinations of electron and ion beam deposition, annealing, and sculpting of the same nanowire provide either low contact resistivity ohmic contacts or a high Schottky/blocking barrier with a single metal source. These results highlight the importance of native point defects distributed inside nanowires and their variation near interfaces with sculpting and annealing.