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Investigations on Field‐Effect Transistors Based on Two‐Dimensional Materials
Author(s) -
Finge T.,
Riederer F.,
Mueller M. R.,
Grap T.,
Kallis K.,
Knoch J.
Publication year - 2017
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201700087
Subject(s) - tungsten diselenide , materials science , transistor , field effect transistor , graphene , optoelectronics , tungsten , nanotechnology , voltage , transition metal , electrical engineering , chemistry , biochemistry , metallurgy , engineering , catalysis
In the present article, experimental and theoretical investigations regarding field‐effect transistors based on two‐dimensional (2D) materials are presented. First, the properties of contacts between a metal and 2D material are discussed. To this end, metal‐to‐graphene contacts as well to transition metal dichalcogenides (TMD) are studied. Whereas metal‐graphene contacts can be tuned with an appropriate back‐gate, metal‐TMD contacts exhibit strong Fermi level pinning showing substantially limited maximum possible drive current. Next, tungsten diselenide (WSe 2 ) field‐effect transistors are presented. Employing buried‐triple‐gate substrates allows tuning source, channel and drain by applying appropriate gate voltages so that the device can be reconfigured to work as n ‐type, p ‐type and as so‐called band‐to‐band tunnel field‐effect transistor on the same WSe 2 flake.