Premium
Nonlinear optical characteristics of monolayer MoSe 2
Author(s) -
Le Chinh Tam,
Clark Daniel J.,
Ullah Farman,
Senthilkumar Velusamy,
Jang Joon I.,
Sim Yumin,
Seong MaengJe,
Chung KooHyun,
Park Hyoyeol,
Kim Yong Soo
Publication year - 2016
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201600006
Subject(s) - monolayer , materials science , photoluminescence , picosecond , exciton , laser , optoelectronics , substrate (aquarium) , raman spectroscopy , raman scattering , wavelength , thin film , optics , nanotechnology , condensed matter physics , physics , oceanography , geology
In this study, we utilized picosecond pulses from an Nd:YAG laser to investigate the nonlinear optical characteristics of monolayer MoSe 2 . Two‐step growth involving the selenization of pulsed‐laser‐deposited MoO 3 film was employed to yield the MoSe 2 monolayer on a SiO 2 /Si substrate. Raman scattering, photoluminescence (PL) spectroscopy, and atomic force microscopy verified the high optical quality of the monolayer. The second‐order susceptibility χ (2) was calculated to be ∼50 pm V −1 at the second harmonic wavelength λ S H G ∼810 nm, which is near the optical gap of the monolayer. Interestingly, our wavelength‐dependent second harmonic scan can identify the bound excitonic states including negatively charged excitons much more efficiently, compared with the PL method at room temperature. Additionally, the MoSe 2 monolayer exhibits a strong laser‐induced damage threshold ∼16 GW cm −2 under picosecond‐pulse excitation . Our findings suggest that monolayer MoSe 2 can be considered as a promising candidate for high‐power, thin‐film‐based nonlinear optical devices and applications.