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Growth of GaN on sapphire via low‐temperature deposited buffer layer and realization of p‐type GaN by Mg doping followed by low‐energy electron beam irradiation (Nobel Lecture)
Author(s) -
Amano Hiroshi
Publication year - 2015
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201500802
Subject(s) - realization (probability) , sapphire , materials science , optoelectronics , doping , substrate (aquarium) , light emitting diode , layer (electronics) , gallium nitride , electron beam processing , resist , irradiation , buffer (optical fiber) , heterojunction , engineering physics , nanotechnology , optics , computer science , telecommunications , physics , laser , statistics , mathematics , oceanography , nuclear physics , geology
This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart television and display systems using blue LEDs. The most important work was done in the mid to late 1980s. The background to the author's work and the process by which the technology enabling the growth of GaN and the realization of p‐type GaN was established are reviewed. ***