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Strong‐field photoemission from silicon field emitter arrays
Author(s) -
Keathley Phillip D.,
Sell Alexander,
Putnam William P.,
Guerrera Stephen,
VelásquezGarcía Luis,
Kärtner Franz X.
Publication year - 2013
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201200189
Subject(s) - field electron emission , common emitter , materials science , silicon , electron , annealing (glass) , atomic physics , field (mathematics) , optoelectronics , laser , optics , physics , mathematics , quantum mechanics , pure mathematics , composite material
Strong‐field photoemission from silicon field emitter arrays is investigated experimentally and results are explained using a “simple‐man” optical‐field emission model. Spectra are collected throughout an in‐situ laser annealing process, leading to a red‐shift in emitted electron energy along with an increase in electron yield. After the annealing process, a high energy plateau is formed which is explained through optical‐field emission along with electron re‐scattering with the tip surface.