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Probing the thermal response of a silicon field emitter by ultra‐fast Laser Assisted Atom Probe Tomography
Author(s) -
Vella Angela,
Silaeva Elena P.,
Houard Jonathan,
Itina Tatiana E.,
Deconihout Bernard
Publication year - 2013
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.201200182
Subject(s) - atom probe , materials science , laser , common emitter , silicon , electric field , ultrashort pulse , atomic physics , optics , wavelength , molecular physics , optoelectronics , physics , nanotechnology , quantum mechanics , transmission electron microscopy
The interaction between an ultrashort laser pulse and a sub‐wavelength silicon tip under a high static electric field is investigated numerically and experimentally. Using an original autocorrelation setup of the laser‐assisted atom probe tomography, the temporal evolution of the lattice temperature at the tip apex is experimentally monitored. An ultrafast cooling process, related to a confinement of the heating at the surface, is reported. This confinement is well predicted by a new model taking into account the free charges generation by photon absorption, their drift‐diffusion motion under the electric field and their energy relaxation to the lattice.