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Lattice distortion (Peierls Transition) caused by spin interaction in the chaotic impurity system of a semiconductor
Author(s) -
Zabrodskii A.,
Veinger A.,
Tisnek T.,
Goloshchapov S.
Publication year - 2009
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.200910402
Subject(s) - impurity , condensed matter physics , magnetic impurity , bound state , coulomb , lattice (music) , graphene , physics , materials science , atomic physics , electron , quantum mechanics , acoustics
The effect of an elastic spontaneous distortion of the crystal lattice of a doped semiconductor Ge:As near the insulator–metal (IM) phase transition has been discovered. The effect is manifested in the electron spin resonance (ESR) of neutral As atoms as a splitting of the single resonance absorption line. It observed at electron concentrations in the range 0.8 < n/n C < 1 at low temperatures T < 100 K (n C = 3.7 × 10 17 cm ‐3 is the critical electron concentration for the IM phase transition). The splitting is the strongest along each of the six [110] directions, which indicates that the local lattice distortion occurs just in these directions. As a result, a sample is possibly divided into separate domains differing in the directions of compressive or tensile deformations. A study of concentration, temperature, and angular dependences of the effect has shown that the phenomenon discovered can be understood in terms of the Peierls spin transition model.