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Localization of excitons in weakly disordered semiconductor structures: A model study
Author(s) -
Gögh N.,
Thomas P.,
Kuznetsova I.,
Meier T.,
Varga I.
Publication year - 2009
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.200910382
Subject(s) - condensed matter physics , physics , boson , delocalized electron , superconductivity , exciton , ground state , insulator (electricity) , phase (matter) , arrhenius equation , quantum mechanics , optoelectronics , kinetics
Abstract Localization of the center‐of‐mass (com) motion of an exciton in a disordered semiconductor structure is studied theoretically by focusing on nonlinear optical spectroscopy. A one‐dimensional tight‐binding model with diagonal disorder is applied and the Coulomb interaction is treated consistently. In the ordered situation the center‐of‐mass momentum (K) selection rule leads to only the lowest transition for K = 0. The break down of the com‐K‐selection rule produces the well known asymmetric excitonic lines of disordered semiconductors. The coupling between the lowest dominant transition to this modified com‐continuum yields Fano‐like features in the nonlinear spectra.