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Current‐density patterns induced by avalanche injection phenomena in high‐voltage diodes during turn‐off
Author(s) -
Niedernostheide F.J.,
Falck E.,
Schulze H.J.,
KellnerWerdehausen U.
Publication year - 2004
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.200410084
Subject(s) - semiconductor , diode , quantum tunnelling , superlattice , chaotic , physics , semiconductor device , voltage , oscillation (cell signaling) , current (fluid) , optoelectronics , condensed matter physics , materials science , nanotechnology , quantum mechanics , computer science , chemistry , biochemistry , layer (electronics) , artificial intelligence , thermodynamics
The turn‐off behavior of two types of high‐voltage diodes is investigated by means of numerical simulations. Basic self‐organized structures appearing as transient patterns during the turn‐off period are quasi‐stationary or traveling current‐density filaments and periodic current‐density distributions. Additionally, we find evolution of more complex patterns that can be considered to be a superposition of basic structures. Examples of such complex structures are presented and mechanisms leading to their evolution are discussed.