Premium
Leakage current through high permittivity thin films
Author(s) -
Schroeder H.,
Schmitz S.
Publication year - 2004
Publication title -
annalen der physik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.009
H-Index - 68
eISSN - 1521-3889
pISSN - 0003-3804
DOI - 10.1002/andp.200310060
Subject(s) - materials science , thin film , radiation , permittivity , oxide , current (fluid) , radiation damage , optoelectronics , tellurium , dielectric , optics , nanotechnology , electrical engineering , metallurgy , physics , engineering
For the leakage current through high‐permittivity, low‐electronic mobility, perovskite‐type thin films a bulk‐limited conduction mechanism is suggested, in contrast to the often assumed interface injection limitation. This model can successfully describe measured leakage data of field, temperature, thickness and electrode dependence in SrTiO 3 and Ba 0.7 Sr 0.3 TiO 3 thin films.